The emergence of GaN-based devices promises a revolution in areas requiring high performance electronics, such as high speed earth and space-based communication systems, advanced radar, integrated sensors, high temperature electronics, and utility power switching. The properties of this system make it ideally suited for operation at elevated temperatures and at voltage and current levels well beyond that accessible by Si. Recent improvements in material quality and device performance are rapidly opening the door to commercialization, and III-N technologies are demonstrating exciting developments of late. Though devices are entering commercialization, there are still considerable unknowns, particularly in the reliability field. Recent advances at the University of Florida will be detailed in this work.

Данное издание не является оригинальным. Книга печатается по технологии принт-он-деманд после получения заказа.