Semiconductor science underpins much of our modern world, providing electronic and optoelectronic devices such as lasers and photodetectors for computer technology, telecommunications and optical storage. The development of novel optoelectronic devices depends in major part on manipulating the material properties of semiconductors through alloying. Progress has been made in recent years alloying small concentrations of nitrogen into III-V semiconductors such as GaAs – the so-called dilute nitrides, offering the possibility of devices for telecommunications and solar cells based on GaAs technology due to the large bowing of the band gap. A possible limitation for such devices is the drastic reduction in electron mobility as nitrogen is added. If this problem is to be overcome, theoretical models of the band structure and scattering processes need to be developed to guide future development. This current work reviews and develops theoretical models of alloy and phonon scattering in semiconductors both in the general case and for specific models pertinent to dilute nitrides.

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