Издательство: | Книга по требованию |
Дата выхода: | июль 2011 |
ISBN: | 978-6-1328-7478-8 |
Объём: | 84 страниц |
Масса: | 147 г |
Размеры(В x Ш x Т), см: | 23 x 16 x 1 |
Please note that the content of this book primarily consists of articles available from Wikipedia or other free sources online. Deep reactive-ion etching (DRIE) is a highly anisotropic etch process used to create deep, steep- sided holes and trenches in wafers, with aspect ratios of 20:1 or more. It was developed for microelectromechanical systems (MEMS), which require these features, but is also used to excavate trenches for high-density capacitors for DRAM and more recently for creating through wafer via's (TSV)'s in advanced 3D wafer level packaging technology .
Данное издание не является оригинальным. Книга печатается по технологии принт-он-деманд после получения заказа.