Deep Reactive-ion Etching

Deep Reactive-ion Etching

Frederic P. Miller, Agnes F. Vandome, John McBrewster

     

бумажная книга



Издательство: Книга по требованию
Дата выхода: июль 2011
ISBN: 978-6-1328-7478-8
Объём: 84 страниц
Масса: 147 г
Размеры(В x Ш x Т), см: 23 x 16 x 1

Please note that the content of this book primarily consists of articles available from Wikipedia or other free sources online. Deep reactive-ion etching (DRIE) is a highly anisotropic etch process used to create deep, steep- sided holes and trenches in wafers, with aspect ratios of 20:1 or more. It was developed for microelectromechanical systems (MEMS), which require these features, but is also used to excavate trenches for high-density capacitors for DRAM and more recently for creating through wafer via's (TSV)'s in advanced 3D wafer level packaging technology .

Данное издание не является оригинальным. Книга печатается по технологии принт-он-деманд после получения заказа.

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