Please note that the content of this book primarily consists of articles available from Wikipedia or other free sources online. Dry etching refers to the removal of material, typically a masked pattern of semiconductor material, by exposing the material to a bombardment of ions (usually a plasma of reactive gases such as fluorocarbons, oxygen, chlorine, boron trichloride; sometimes with addition of nitrogen, argon, helium and other gases) that dislodge portions of the material from the exposed surface. Unlike with many (but not all, see isotropic etching) of the wet chemical etchants used in wet etching, the dry etching process typically etches directionally or anisotropically.

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