High Quality Content by WIKIPEDIA articles! Gallium manganese arsenide is a magnetic semiconductor. It is based on the world`s second favorite semiconductor, GaAs, and as such is readily compatible with existing semiconductor technologies. Differently from other dilute magnetic semiconductors (DMSs), such as the majority of those based on II-VI semiconductors, it is not paramagnetic but ferromagnetic, and hence exhibits hysteretic magnetization behavior. This memory effect is of importance for the creation of persistent devices. In (Ga,Mn)As, the manganese atoms provide a magnetic moment, and each also acts as an acceptor, making it a p-type material. The presence of carriers allows the material to be used for spin-polarized currents. In contrast, many other ferromagnetic DMSs are strongly insulating and so do not possess free carriers. (Ga,Mn)As is therefore a candidate as a spintronic material.