This book focuses on the growth of high quality free standing single crystal diamond. It is appropriate for those who are working or interested to work on the field of epitaxial diamond growth, either by heteroepitaxy or homoepitaxy. It should be beneficial to others working in similar fields. The growth process is very well described using schematics and tables. Emphasis is given on the growth of pure and defects free crystals, since they are important in diamond electronics. In heteroepitaxy, first the role of negative biasing of the substrate is discussed in great detail then a two step process used to grow free standing diamond crystals approaching the quality of type IIa natural diamond is explained. In homoepitaxy, process to grow thick diamond crystals better than type IIa natural diamonds is described. Effects of growth parameters on different kind of defects are explained. A growth regime is found where diamond can be grown with no nitrogen - vacancy and other defects.

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