Издательство: | Книга по требованию |
Дата выхода: | июль 2011 |
ISBN: | 978-6-1328-0087-9 |
Объём: | 80 страниц |
Масса: | 141 г |
Размеры(В x Ш x Т), см: | 23 x 16 x 1 |
High Quality Content by WIKIPEDIA articles! Indium gallium phosphide (InGaP), also called gallium indium phosphide (GaInP), is a semiconductor composed of indium, gallium and phosphorus. It is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide. It is used mainly in HEMT and HBT structures, but also for the fabrication of high efficiency solar cells used for space applications and, in combination with aluminium (AlGaInP alloy) to make high brightness LEDs with orange-red, orange, yellow, and green colors.
Данное издание не является оригинальным. Книга печатается по технологии принт-он-деманд после получения заказа.