Издательство: | Книга по требованию |
Дата выхода: | июль 2011 |
ISBN: | 978-3-8433-7747-8 |
Объём: | 100 страниц |
Масса: | 172 г |
Размеры(В x Ш x Т), см: | 23 x 16 x 1 |
The structure of Schottky-barrier (SB) MOSFETs was investigated for both the perspective of practical applications and interest in novel Flash memory. We demonstrated how the source-side injection of hot electrons in the dopant-segregated SB (DSSB) Flash memory cell achieves high-speed, low-voltage programming with excellent injection efficiency, and no constraints on the optimization of gate and drain voltages. Moreover, the drain disturbance-free phenomenon in NOR Flash architecture was achieved. Excellent programming efficiency, especially, was achieved in a DSSB Flash device with a narrow fin width due to an enhanced lateral electric field without any sacrifice of parasitic resistance. Thus, the DSSB device can be a promising candidate in NOR Flash memory for attaining a lower programming voltage and power consumption.
Данное издание не является оригинальным. Книга печатается по технологии принт-он-деманд после получения заказа.