Magnetoresistive Random Access Memory

Magnetoresistive Random Access Memory

Frederic P. Miller, Agnes F. Vandome, John McBrewster

     

бумажная книга



Издательство: Книга по требованию
Дата выхода: июль 2011
ISBN: 978-6-1302-1287-2
Объём: 124 страниц
Масса: 209 г
Размеры(В x Ш x Т), см: 23 x 16 x 1

Magnetoresistive Random Access Memory is a non-volatile computer memory (NVRAM) technology, which has been under development since the 1990s. Continued increases in density of existing memory technologies – notably Flash RAM and DRAM – kept it in a niche role in the market, but its proponents believe that the advantages are so overwhelming that Magnetoresistive RAM will eventually become dominant for all types of memory, becoming a true universal memory.

Данное издание не является оригинальным. Книга печатается по технологии принт-он-деманд после получения заказа.

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