MOSFET

MOSFET

Frederic P. Miller, Agnes F. Vandome, John McBrewster

     

бумажная книга



Издательство: Книга по требованию
Дата выхода: июль 2011
ISBN: 978-6-1302-1198-1
Объём: 104 страниц
Масса: 178 г
Размеры(В x Ш x Т), см: 23 x 16 x 1

Please note that the content of this book primarily consists of articles available from Wikipedia or other free sources online. The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a device used to amplify or switch electronic signals. The basic principle of the device was first proposed by Julius Edgar Lilienfeld in 1925. The MOSFET includes a channel of n-type or p-type semiconductor material (see article on semiconductor devices), and is accordingly called an NMOSFET or a PMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common.

Данное издание не является оригинальным. Книга печатается по технологии принт-он-деманд после получения заказа.

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