Patterning by Etching at the Nanoscale

Patterning by Etching at the Nanoscale

Lambert M. Surhone, Mariam T. Tennoe, Susan F. Henssonow

     

бумажная книга



Издательство: Книга по требованию
Дата выхода: июль 2011
ISBN: 978-6-1345-9277-2
Объём: 88 страниц
Масса: 153 г
Размеры(В x Ш x Т), см: 23 x 16 x 1

Please note that the content of this book primarily consists of articles available from Wikipedia or other free sources online. Patterning by Etching at the nanoscale (PENs) is a soft lithographic technique in which the bonds in the PDMS matrix are broken to controlably etch PDMS (ie dissolve) at a slow rate along the outside of a PDMS channel formed with a patterned PDMS stamp applied to a surface. The channel in the stamp can be enlarged in the order of tens of nanometers to several micrometres. Exposing a fresh area of a surface that can be reacted with.PDMS contains polymer chains of silicon-oxygen bonds, these bonds can be broken by fluoride containing species, in the same way that silicon wafers are prepared by etching with hydrofluoric acid, ammonium fluoride and related compounds.

Данное издание не является оригинальным. Книга печатается по технологии принт-он-деманд после получения заказа.

Каталог