Robert H. Dennard

Robert H. Dennard

Lambert M. Surhone, Mariam T. Tennoe, Susan F. Henssonow

     

бумажная книга



Издательство: Книга по требованию
Дата выхода: июль 2011
ISBN: 978-6-1331-2874-3
Объём: 180 страниц
Масса: 295 г
Размеры(В x Ш x Т), см: 23 x 16 x 1

Please note that the content of this book primarily consists of articles available from Wikipedia or other free sources online. Robert Dennard (born September 5, 1932) is an American electrical engineer and inventor. Dennard was born in Terrell, Texas, U.S.. He received his B.S. and M.S. degrees in Electrical Engineering from Southern Methodist University, Dallas, in 1954 and 1956, respectively. He earned a Ph.D. from Carnegie Institute of Technology in Pittsburgh, Pennsylvania, in 1958. His professional career was spent as a researcher for International Business Machines. In 1968, he invented dynamic random access memory (DRAM). Dennard was also among the first to recognize the tremendous potential of downsizing MOSFETs.

Данное издание не является оригинальным. Книга печатается по технологии принт-он-деманд после получения заказа.

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