Presented is our measurements of a single electronic spin in the gate oxide of submicron-size silicon field effect transistors. Defects near the silicon and silicon dioxide interface have profound effects on the transistor conduction properties. For a submicron transistor, there might be only one isolated trap state that is within a proper tunneling distance regarding to both the coordinate and energy. We have studied the statistics and dynamics of individual defects extensively by random telegraph signal (RTS), the stochastic switching of the channel conductivity due to the trapping of single channel electrons by the defect. We also have, for the first time, studied the spin properties of these individual defects. By investigating the dependence of RTS statistics on a plane magnetic field, we have identified spin states of a single electron on a defect. Using microwave radiation of frequencies ranging from 16 - 50 GHz, we have detected magnetic resonance of a single electron spin. The trap occupancy or channel current changes at the electron spin resonance condition, with a g-factor of 2.02+-0.015.

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