Издательство: | Книга по требованию |
Дата выхода: | июль 2011 |
ISBN: | 978-6-1304-8968-7 |
Объём: | 88 страниц |
Масса: | 153 г |
Размеры(В x Ш x Т), см: | 23 x 16 x 1 |
High Quality Content by WIKIPEDIA articles! High Quality Content by WIKIPEDIA articles! Subthreshold conduction or subthreshold leakage or subthreshold drain current is the current that flows between the source and drain of a MOSFET when the transistor is in the subthreshold region, or weak-inversion region, that is, for gate-to-source voltages below the threshold voltage. The subthreshold region is often referred to as the weak inversion region. The terminology for various degrees of inversion is described in Tsividis. In digital circuits, subthreshold conduction is generally viewed as a parasitic leakage in a state that would ideally have no current. In micropower analog circuits, on the other hand, weak inversion is an efficient operating region, and subthreshold is a useful transistor mode around which circuit functions are designed.
Данное издание не является оригинальным. Книга печатается по технологии принт-он-деманд после получения заказа.