VARIATION OF POPULATION IN SILICON WITH P-111Cd annealing temperature. Using Nuclear Method, which is Perturbed Angular Correlation

VARIATION OF POPULATION IN SILICON WITH P-111Cd annealing temperature. Using Nuclear Method, which is Perturbed Angular Correlation

Temesgen Yirdaw Berhe, Genene Tessema (PhD)

     

бумажная книга



Издательство: Книга по требованию
Дата выхода: июль 2011
ISBN: 978-3-6392-5645-1
Объём: 60 страниц
Масса: 111 г
Размеры(В x Ш x Т), см: 23 x 16 x 1

Over the last few years researchers have made many works on semiconductors as long as semiconductor technology plays a great role in developing the technologies we are using now a days. therefore my work has an input on impacts of point defects in semiconductor. This work will help researchers who are doing on efficiency of semiconductors and the i somewhat important methods used also for other researchers who are out of Physics such as medicine, veterinary to determin the structures of DNA in human and other animals. people who are interested on using this method for researches can refer this book. generally this book provides information about the effect of annealing temperature in the formation of complex Cd-P population in silicon. It also provides information for further study of point defects in semiconductor finally it gives idea about how researches will held on.

Данное издание не является оригинальным. Книга печатается по технологии принт-он-деманд после получения заказа.

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